Heavily-Doped Germanium on Silicon with Activated Doping Exceeding 1020 cm–3 as an Alternative to Gold for Mid-Infrared Plasmonics

Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films

Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the 10 to 10 cm range, by infrared spectroscopy, first principle cal...

Mid-Infrared Sensing Using Heavily Doped Germanium Plasmonics on Silicon Substrates

Fabrication of mid-infrared plasmonic antennas based on heavily doped germanium thin films

In this work, the growth and the fabrication of heavily doped germanium plasmonic antennas for mid-infrared applications is reported. By tuning the phosphorus doping concentration and the antenna geometrical parameters, plasma frequencies for targeting the 8-15 μm spectral region are achieved. 1 μm thick, heavily doped (2.3 × 10 cm ) germanium was used to fabricate dipole antennas of 800 nm wid...

Tunability of the Dielectric Function of Heavily Doped Germanium Thin Films for Mid-infrared Plasmonics

Ultra-doped n-type germanium thin films for sensing in the mid-infrared

A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) ...